RF Power Field - Effect Transistor
300 W ,50V,175 MHz N – Channel Broadband MOSFET
Features
Guaranteed Performance at 175 MHz ,50 V
Output Power -300 W
Gain -14 dB (16 dB Typ ) Efficiency 一50%
Low Thermal Resistance -0.35CW
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MIA – COM Products RoHS compliant
Package Outline
Description and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz . The high power , high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands .
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