The MRFX1K80H is the first device based on new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace, and mobile radio applications. Its unmatched input and output design allow for wide frequency range use from 1.8 to 400 MHz.The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).
●Based on new 65 V LDMOS technology, designed for ease of use
●Characterized from 30 to 65 V for the extended power range
●Unmatched input and output
●High breakdown voltage for enhanced reliability and higher efficiency architectures
●High drain-source avalanche energy absorption capability
●High ruggedness. Handles 65:1 VSWR.
●Lower thermal resistance option in the over-molded plastic package: MRFX1K80N
●Industrial, scientific, medical (ISM)
●MRI, RF ablation and skin treatment
●Industrial heating, welding and drying systems
●Radio and VHF TV broadcast