The MRF454 is an NPN silicon rf power transistor. It is designed for applications as a high–power linear amplifier from 2.0 to 30 MHz.
MRF454 absolute maximum ratings: (1)Collector–Emitter Voltage: 25 Vdc; (2)Collector–Base Voltage: 45 Vdc; (3)Emitter–Base Voltage: 4.0 Vdc; (4)Collector Current — Continuous: 20 Adc; (5)Total Device Dissipation @ TC = 25°C: 250 W; (6)Derate above 25°C: 1.43 W/°C; (7)Storage Temperature Range: –65 to +150 °C.
●Designed primarily for linear large-signal output stages up to 150 MHz
●Superior high order IMD
●IMD(d3) (150W PEP): –32dB (Typ.)
●IMD(d11) (150W PEP): –60dB (Typ.)
●Specified 50V, 30MHz characteristics
●Output power = 150 Watts
●Power gain = 17 dB (Typ.)
●Efficiency = 45% (Typ.)
●100% tested for load mismatch at all phase angles