Features
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN-13 db MINIMUM
Specifications
Attribute/Value
Channel Type:N
Maximum Continuous Drain Current:35 A
Maximum Drain Source Voltage:70 V
Package Type:DR
Mounting Type:Panel Mount
Pin Count:5
Channel Mode:Enhancement
Maximum Gate Threshold Voltage:7V
Maximum Power Dissipation:438 W
Transistor Configuration:Common Source
Maximum Gate Source Voltage:-20 V, +20 V
Number of Elements per Chip:2
Maximum Operating Temperature:+200 °C
Transistor Material:Si
Height:5.08mm
Width:10.16mm
Series:TetraFET
Length:34.03mm
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