Description
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.
Features
●N–Channel Enhancement Mode MOSFET
●Excellent Thermal Stability Suited for Cass A Operation
●Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W,
●Power gain = 17 dB (min)’ Efficiency = 60% (min)
●Typical Data for Power Amplifiers Applications in Industrial,
●Commercial and Amateur Radio Equipment:
●Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power
●gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)
●Gold Top Metal
●Low Crss – 8 pF @ VDS = 28 V
●100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
●Facilitates Manual Gain Controll, ALC and Modulation Techniques
Applications
● Aerospace and Defense
● ISM
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