Original new MRF6V2150NB RF Power Transistor Power MOSFET Transistor designed primarily for wideband large – signal output and driver applicationswith frequencies up to 450 MHz. Devices are unmatched and are suitable foruse in industrial, medical and scientific applications
Product Details:
Part Number:MRF6V2150NB
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Features:
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,Pout = 150 Watts
Power Gain:25.5 dB
Drain Efficiency:69%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 WattsOutput Power
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225°C Capable Plastic Package
RoHS Compliant
General Parameters:
Transistor Type:LDMOS
Technology:Si
Application Industry:ISM, Broadcast
Application:Scientific, Medical
CW/Pulse:CW
Frequency:10 to 450 MHz
Power:51.76 dBm
Power(W):149.97 W
CW Power:150 W
Power Gain (Gp):23.5 to 26.5 dB
Input Return Loss:-17 to -3 dB
VSWR:10.00:1
Polarity:N-Channel
Supply Voltage:50 V
Threshold Voltage:1 to 3 Vdc
Breakdown Voltage – Drain-Source:110 V
Voltage – Gate-Source (Vgs):-0.5 to 12 Vdc
Drain Efficiency:0.683
Drain Current:450 mA
Impedance Zs:50 Ohms
Thermal Resistance:0.24 °C/W
Package Type:Flange
Package:CASE 1484–04, STYLE 1 TO–272 WB–4 PLASTIC
RoHS:Yes
Operating Temperature:150 Degree C
Storage Temperature:-65 to 150 Degree
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