Original New BLF578 RF Power Transistor Power MOSFET Transistor
Features
Specification
Frequency range: 10~500mhz
Nom output power: 1000W
Power gain(VDS = 50 V; PL = 1000 W): 26 dB
Drain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W): 75%
Pinning Information
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