Description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Symbol Parameter
●frange frequency range =470 to 860MHz
●PL(1dB) nominal output power at 1 dB gain compression 300W
●Test signal: CW
●PL(PEP) output power 300 W
●Gp power gain VDS = 42 V; f1 = 860 MHz; f2 = 860.1 MHz; PL(PEP) = 300 W 18 21 dB
Features and benefits
●Excellent ruggedness
●High power gain
●Excellent reliability
●High efficiency
●Good thermal stability
●Easy power control
●Integrated ESD protection
●Internal input and output matching
●Advanced flange material for optimum thermal behavior and reliability
●Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substance
Applications
●Communication transmitter applications in the UHF band
●Industrial applications in the UHF band
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