Description
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
Features
●Guaranteed performance at 175MHz, 28V:
●Output power: 300W
●Gain: 12dB (14dB Typ.)
●Efficiency: 50%
●Low thermal resistance: 0.35°C/W
●Ruggedness tested at rated output power
●Nitride passivated die for enhanced reliability
Specification
●Transistor Polarity: N-Channel
●Technology: Si
●Id – Continuous Drain Current: 32 A
●Vds – Drain-Source Breakdown Voltage: 65 V
●Operating Frequency: 175 MHz
●Gain: 12 dB
●Output Power: 300 W
●Minimum Operating Temperature: – 65 C
●Maximum Operating Temperature: + 150 C
●Mounting Style: SMD/SMT
●Package / Case: 375-04
●Pd – Power Dissipation: 500 W
●Vgs – Gate-Source Voltage: 40 V
●Vgs th – Gate-Source Threshold Voltage: 3 V
Applications
●Aerospace and Defense
●ISM
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