Features:
* Gold metallization
* Excellent thermal stability
* Common source configuration
* POUT = 150 W min. with 14 dB gain @ 175MHz
* Thermally enhanced packaging for lower
* junction temperatures
* GFS and VGS sort marked on unit
Speciafication:
* Series: SD2931
* Product Category: RF MOSFET Transistors
* Transistor Polarity: N-Channel
* Technology: Si
* Id – Continuous Drain Current: 20 A
* Vds – Drain-Source Breakdown Voltage: 125 V
* Gain: 15 dB
* Output Power: 150 W
* Minimum Operating Temperature: – 65 C
* Maximum Operating Temperature: + 200 C
* Mounting Style: Screw Mount
* Packaging: Bulk
* Configuration: Single Dual Source
* Height: 7.11 mm (Max)
* Length: 24.89 mm (Max)
* Operating Frequency: 230 MHz
* Width: 12.83 mm (Max)
* Channel Mode: Enhancement
* Pd – Power Dissipation: 389 W
* Vgs – Gate-Source Voltage: 20 V
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