BLF184XR, A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Features
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (HF to 600 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
Description
EU RoHS: Compliant
ECCN (US): EAR99
Part Status: Active
HTS: 8541.29.00.75
Configuration: Dual Common Source
Channel Mode: Enhancement
Channel Type: N
Number of Elements per Chip: 2
Mode of Operation: Pulsed RF
Process Technology: LDMOS
Maximum Drain Source Voltage (V): 135
Maximum Gate Source Voltage (V):11
Maximum Gate Threshold Voltage (V): 2.25
Maximum VSWR: 65
Maximum Gate Source Leakage Current (nA): 140
Maximum IDSS (uA): 1.4
Maximum Drain Source Resistance (mOhm): 140(Typ)@6V
Typical Input Capacitance @ Vds (pF): 269@50V
Typical Reverse Transfer Capacitance @ Vds (pF): 2.75@50V
Typical Output Capacitance @ Vds (pF): 107@50V
Maximum Frequency (MHz): 600
Minimum Operating Temperature (°C): -65
Maximum Operating Temperature (°C): 200
Pin Count: 5
Supplier Package: SOT-1214A
Mounting: Screw
Package Height: 4.72(Max)
Package Length: 34.16(Max)
Package Width: 9.91(Max)
PCB changed: 5
Applications
1. Industrial, scientific and medical applications
2. Broadcast transmitter applications
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