Description:
–Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
–Transistor polarity: N-Channel
–Technology: Si
–Id-continuous drain current: 60 A
–Vds-Drain-source breakdown voltage: 125 V
–Gain: 17 dB
–Output power: 600 W
–Minimum operating temperature:-65 C
–Maximum working temperature: + 150 C
–Package / Box: 368-3
–Configuration: Single
–Operating frequency: 80 MHz
–Type: RF Power MOSFET
–Trademark: MACOM
–Pd-power dissipation: 1.35 kW
–Product Type: RF MOSFET Transistors
–Factory Packing Quantity: 1
–Subcategory: MOSFETs
–Vgs-gate-source voltage: 40 V
–Vgs th- gate-source threshold voltage: 3 V
–Unit weight: 122.795 g
Features:
–N–Channel enhancement mode MOSFET
–Specified 50 volts, 30 MHz Characteristics – Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
–Min Frequency: 2 MHz
–Max Frequency: 100 MHz
–Pout: 600 W
–Gain: 17 dB
–Efficiency: 45 %
Applications:
–Aerospace and Defense
–ISM
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